PE642DT K4 UNIKC Dual N-Channel Enhancement Mode MOSFET PDFN 3x3S
Product Code: PE642DT
Part Marking: K4
Brand: UNIKC Semiconductor
Package Code: PDFN 3x3S
Datasheet: PE642DT
Product Features
PE642DT is a Dual N-Channel Enhancement Mode MOSFET manufactured by UNIKC. It is offered in a PDFN 3x3S package and is RoHS compliant. Low RDS(ON) values provide high current capability.
- Function: Dual N-Channel Enhancement Mode MOSFET.
- V(BR)DSS: 30V (Q1 & Q2).
- RDS(ON) (Max): Q2: 9mΩ @ VGS=10V / Q1: 10.5mΩ @ VGS=10V.
- Continuous Drain Current (TC=25°C): Q2: 34A / Q1: 31A.
- Continuous Drain Current (TA=25°C): Q2: 11A / Q1: 9.7A.
- Gate-Source Voltage: ±20V.
- Gate Threshold Voltage VGS(th): 1.3V ~ 2.3V (Typ. 1.75V).
- Power Dissipation (TC=25°C): Q2: 20W / Q1: 19W.
- Operating Junction Temperature: -55°C ~ 150°C.
- Package: PDFN 3x3S, RoHS Compliant.
- Application Areas: DC-DC converters, load switches, power management, battery protection circuits.
Sales Information
Condition: NEW. Original.
Warranty Period: No warranty is provided for semiconductor products.
Shipping (Turkey): All orders placed on weekdays before 16:00 and on Saturdays before 14:30 are shipped the same day via contracted cargo. (Excluding peak cargo periods and extraordinary situations)
International Shipping: Orders placed on weekdays before 16:00 are shipped the same business day via Air Parcel. Orders placed on weekends and outside business hours are shipped on the following business day. (Excluding peak periods) Shipping country is Turkey.
