PE636BA I6 xxx UNIKC N-Channel Enhancement Mode MOSFET PDFN 3x3P
Product Code: PE636BA
Part Marking: I6 *** (Codes starting with I6 are compatible with this product)
Brand: UNIKC
Package Type: PDFN 3x3P
Datasheet: PE636BA
Product Features
The PE636BA is a high-efficiency N-Channel Enhancement Mode Power MOSFET manufactured by UNIKC. It features a drain-to-source voltage (Vds) of 30V and a low on-resistance (Rds(on)) of just 9mΩ at a 10V gate-source voltage. These characteristics make it an ideal solution for applications such as power switching, DC-DC converters, and battery management systems. Its compact PDFN 3x3P package ensures high performance in space-constrained designs.
- Type: N-Channel Enhancement Mode MOSFET
- Drain-to-Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 33A (Tc = 25°C)
- On-Resistance (Rds(on)): 9mΩ (typ) @ Vgs = 10V, Id = 10A
- On-Resistance (Rds(on)): 15.5mΩ (max) @ Vgs = 4.5V, Id = 10A
- Gate Threshold Voltage (Vgs(th)): 1.8V (typ)
- Total Gate Charge (Qg): 8.3 nC (typ) @ Vgs = 10V
- Power Dissipation (Pd): 17.8W (Tc = 25°C)
- Operating Temperature Range: -55°C to 150°C
- Package: PDFN 3x3P
Sales Information
Condition: BRAND NEW. Original.
Warranty: No warranty is provided for semiconductor products.
Shipping (Turkey): All orders placed before 16:30 on weekdays and 14:30 on Saturdays are shipped the same day via our contracted courier. (Excluding peak shipping periods, public holidays, and conditions that may prevent the courier company from operating)
International Shipping: Orders placed before 16:30 on weekdays are shipped via Air Parcel on the same business day. Orders placed on weekends and outside working hours are shipped on the next business day. (Excluding peak periods) Country of origin: Turkey.
