PE616BA (PE16BA) G4 xxx UNIKC N-Channel Enhancement Mode MOSFET PDFN-3x3
Product Code: PE616BA
Part Marking: G4 xxx (Variations include G4 GUC, G4 GNA, G4 CUC, etc.)
Brand: UNIKC
Package Type: PDFN-3x3 (8-pin)
Datasheet: PE616BA
Product Features
The PE616BA from UNIKC is an N-Channel Enhancement Mode Power MOSFET designed for applications requiring high efficiency and power density. This component features a 30V Drain-to-Source breakdown voltage and a continuous drain current capability of up to 36A. Its low Rds(on) value (typically 7mΩ at 10V VGS) minimizes conduction losses, making it an ideal choice for DC-DC converters, battery management systems (BMS), motor control circuits, and power switching applications. The compact PDFN-3x3 package offers excellent thermal performance while saving board space.
- Type: N-Channel Enhancement Mode MOSFET
- Drain-to-Source Voltage (Vdss): 30V
- Continuous Drain Current (Id) @ Tc=25°C: 36A
- On-Resistance (Rds(on)) @ Vgs=10V: 7mΩ (Typ)
- On-Resistance (Rds(on)) @ Vgs=4.5V: 9.5mΩ (Typ)
- Gate Threshold Voltage (Vgs(th)): 1.35V - 2.3V
- Total Gate Charge (Qg) @ Vgs=10V: 17.7 nC (Typ)
- Power Dissipation (Pd) @ Tc=25°C: 36W
- Package: PDFN-3x3
- Logic Level Gate Drive: Yes
Sales Information
Condition: BRAND NEW. Original.
Warranty: No warranty is provided for semiconductor products.
Shipping (Turkey): All orders placed before 16:30 on weekdays and 14:30 on Saturdays are shipped the same day via our contracted courier. (Excluding peak shipping periods, public holidays, and conditions that may prevent the courier company from operating)
International Shipping: Orders placed before 16:30 on weekdays are shipped via Air Parcel on the same business day. Orders placed on weekends and outside working hours are shipped on the next business day. (Excluding peak periods) Country of origin: Turkey.
