B02N03R EMB02N03HR 30V 100A N-Channel MOSFET EDFN 5x6 

Product Code: EMB02N03HR 

Part Marking: B02N03R 

Brand: Excelliance MOS Corporation 

Package: EDFN 5x6 (5mm x 6mm) 

EMB02N03HR Datasheet 

Product Specifications 

The EMB02N03HR is a high-performance N-Channel Logic Level Enhancement Mode MOSFET manufactured by Excelliance MOS Corporation. With a 30V breakdown voltage, 100A continuous current capability, and an extremely low 1.7mΩ RDS(ON) resistance, it is ideal for power management applications. Suitable for battery management systems, DC-DC converters, motor drivers, and high-current switching circuits. 

• MOSFET Type: N-Channel 
• Drain-Source Voltage (VDSS): 30V 
• Continuous Drain Current (ID): 100A 
• Pulsed Drain Current (IDM): 400A 
• Gate-Source Voltage (VGS): ±20V 
• Threshold Voltage (VGS(th)): 1V ~ 3V (typ 2V) 
• RDS(ON) @ VGS=10V, ID=30A: 1.4mΩ typ / 1.7mΩ max 
• RDS(ON) @ VGS=4.5V, ID=30A: 1.9mΩ typ / 2.6mΩ max 
• Total Gate Charge (Qg) @ VGS=10V: 67nC 
• Total Gate Charge (Qg) @ VGS=4.5V: 32nC 
• Power Dissipation (PD): 83W @ TC=25°C 
• Avalanche Energy (EAS): 320mJ 
• Operating Temperature (TJ): -55°C ~ +150°C 
• Features: UIS and Rg 100% Tested, Lead-Free (Pb-Free), Halogen Free 
• Applications: Battery Management, DC-DC Converter, Motor Driver, Power Switching 

Sales Information 

Condition: NEW. Original. 

Shipping (Turkey): All orders placed before 16:00 on weekdays and 14:30 on Saturdays are shipped the same day via contracted cargo. (Except during peak shipping periods and extraordinary circumstances) 

International Shipping: Orders placed before 16:00 on weekdays are shipped the same business day via Air Parcel. Orders placed on weekends and outside business hours are shipped on the next business day. (Except during peak periods) Ships from Turkey.